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| AP4525GEH-A RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Good Thermal Performance Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID 40V 26m 8.3A -40V 40m -7A S2 G2 P-CH BVDSS TO-252-4L RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 16 8.3 6.6 50 3.125 0.025 -55 to 150 -55 to 150 P-channel -40 16 -7.0 -5.6 -50 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Value Max. Max. 8 40 Unit /W /W Data and specifications subject to change without notice 200627071-1/7 AP4525GEH-A N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 6 9 1.5 4 7 20 20 4 580 100 70 2 Max. Units 26 32 3 1 25 30 14 930 3 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=16V ID=6A VDS=20V VGS=4.5V VDS=20V ID=6A RG=3,VGS=10V RD=3.3 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=15A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s Min. - Typ. 20 15 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4525GEH-A P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -0.8 - Typ. -0.03 5 9 2 5 8.5 15 27 25 760 150 105 6 Max. Units 40 60 -2.5 -1 -25 30 24 1220 9 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=16V ID=-5A VDS=-20V VGS=-4.5V VDS=-20V ID=-5A RG=3,VGS=-10V RD=4 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-12A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/s Min. - Typ. 20 16 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.N-CH , P-CH are same , mounted on 2oz FR4 board t 10s. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 3/7 AP4525GEH-A N-Channel 50 50 T C = 25 C 40 o ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T C = 150 C 40 o 10V 7.0V 5.0V 4.5V 30 30 20 20 V G =3.0V V G =3.0V 10 10 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.8 ID=4A 100 T C =25 o C Normalized RDS(ON) 1.4 ID=6A V G =10V RDS(ON) (m) 80 60 1.0 40 20 2 4 6 8 10 0.6 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 14 12 10 Normalized VGS(th) (V) T j =150 o C IS(A) 8 T j =25 o C 1.2 6 0.8 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4525GEH-A N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) I D =6A V DS =20V 8 C iss C (pF) 100 C oss C rss 4 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 10 100us 1ms 10ms 100ms 1s T A =25 C Single Pulse o 0.2 ID (A) 0.1 1 0.1 0.05 PDM t 0.02 0.01 0.1 T Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75/W 10s Single Pulse 0.01 0.1 1 10 100 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =5V 40 ID , Drain Current (A) T j =25 o C 30 T j =150 o C QG 4.5V QGS QGD 20 10 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4525GEH-A P-Channel 50 50 T C = 25 C 40 o -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) T C = 150 o C 40 -10V -7.0V -5.0V -4.5V 30 30 20 V G = - 3.0V 20 V G = - 3.0V 10 10 0 0 1 2 3 4 5 6 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 200 1.6 I D = -3 A 170 T C =25 o C 1.4 I D = -5A V G = -10V RDS(ON) (m) Normalized RDS(ON) 140 110 1.2 80 1.0 50 20 2 4 6 8 10 0.8 25 50 75 100 125 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 14 12 10 Normalized -VGS(th) (V) 1.3 1.5 1.2 8 -IS(A) 6 T j =150 o C T j =25 o C 0.8 4 2 0 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4525GEH-A P-Channel 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D = -5 A V DS = - 2 0 V 8 1000 C iss C (pF) 4 100 C oss C rss 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 100us 1ms 10ms 100ms 1s Normalized Thermal Response (Rthja) 0.2 -ID (A) 0.1 1 0.1 0.05 PDM t 0.02 0.1 T A =25 C Single Pulse o T Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75/W 10s 0.01 Single Pulse 0.01 0.1 1 10 100 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =-5V 40 VG T j =25 o C T j =150 o C -ID , Drain Current (A) QG -4.5V QGS QGD 30 20 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L) A B SYMBOLS Millimeters MIN NOM MAX A B C D P S 6.40 5.2 9.40 2.40 0.50 3.50 0.80 0.40 2.20 0.45 0.00 0.90 5.40 6.6 5.35 9.80 2.70 1.27 REF. 0.65 4.00 1.00 0.50 2.30 0.50 0.075 1.20 5.60 6.80 5.50 10.20 3.00 0.80 4.50 1.20 0.60 2.40 0.55 0.15 1.50 5.80 E3 C M E3 R G H J K L R D M S P G 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. H K J L Part Marking Information & Packing : TO-252(4L) Part Number Package Code meet Rohs requirement XXXXGEH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence |
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